Effect of CVD parameters on large area growth of highly crystalline MoS2 thin flakes

Tu Nguyen Van, Trinh Pham Van, Chuc Nguyen Van, Lam Vu Dinh, Minh Phan Ngoc

Abstract


In this study, we presented a report on effect of growth parameters (seeding promoter, growth temperature, Ar gas flow rate) on the formation of MoS2 monolayer. The morphology and structure of as-grown MoS2 were investigated in detail by optical microscopy, atomic force microscopy, Raman and photoluminesence spectroscopy techniques. The results showed that a highly reproducible growth of dense MoS2 triangular flakes with the size of ~35 µm over large area (~1.5x1 cm2) can be obtained by using a optimized parameters. The MoS2 field effect transistors based on the as-grown MoS2 exhibited carrier mobility of 0.5–2 cm2V−1s−1 and On/Off ratio of ~104. Our results can provide a useful information to realize large area, high quality of MoS2 for real electronic applications.

Keywords


MoS2; chemical vapor deposition; field effect transistor

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DOI: https://doi.org/10.51316/jca.2021.128

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